Physicochemical characterization of passive films on niobium by admittance and electrochemical impedance spectroscopy studies
نویسندگان
چکیده
An analysis of the electronic properties of amorphous semiconductor–electrolyte junction is reported for thin (Dox < 20 nm) passive film grown on Nb in acidic electrolyte. It will be shown that the theory of amorphous semiconductor–electrolyte junction (a-SC/El) both in the low band-bending and high band-bending regime is able to explain the admittance data of a-Nb2O5/El interface in a large range (10 Hz–10 kHz) o
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